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VOLT-AMPERE CHARACTERISTIC AND INDUCED CURRENT IN THE EXTERNAL CIRCUIT OF AVALANCHE-GENERATOR DIODES ON THE BASIS OF THE BACK DISPLACED ABRUPT P–N-JUNCTIONS

Manuscript submitted  09.09.2015 г.
PACS     85.30.Mn; 85.30.−z; 85.30.Kk
Radiofiz. elektron. 2015, 20(4): 45-53
Full text  (PDF)

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  10. Maksymov, P. P., 2008. A solution algorithm for the drift-diffusion model equations of semiconducting structures with avalanche pn-junctions. In: V. M. Yakovenko, ed. 2008. Radiofizika i elektronika. Kharkov: IRE NAS of Ukraine Publ. 13(3), pp. 523–528 (in Russian).
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