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ISSN 2415-3400 (Online)
ISSN 1028-821X (Print)

VOLT-AMPERE CHARACTERISTIC AND INDUCED CURRENT IN THE EXTERNAL CIRCUIT OF AVALANCHE-GENERATOR DIODES ON THE BASIS OF THE BACK DISPLACED ABRUPT P–N-JUNCTIONS

Lukin, KA, Maksymov, PP
Organization: 

O. Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine
12, Proskura st., Kharkov, 61085, Ukraine
E-mail: lukin.konstantin@gmail.com

https://doi.org/10.15407/rej2015.04.045
Language: russian
Abstract: 

Creation of modern solid-state microwave power sources is based on the application of active elements with expanded functionality. The reverse-biased p–n-junctions with DC voltage are active elements of diodes generators. Avalanche-generator diodes (AGD) based on reverse-biased abrupt p–n-junctions with DC voltage are promising for creating diode generators. We investigated the static current-voltage characteristic of AGD by the methods of diffusion-drift theory. The induced current in the AGD external circuit was investigated. It was found that the spectrum of induced current is determined by the spectrum of auto oscillations of AGD. The results of the research are the theoretical basis for the creation of diode microwave generators with the requisite energy and spectral characteristics.

Keywords: ampere-voltage characteristic, avalanche-generator diodes, current instability, electronic efficiency, induced current, output power

Manuscript submitted  09.09.2015 г.
PACS     85.30.Mn; 85.30.−z; 85.30.Kk
Radiofiz. elektron. 2015, 20(4): 45-53
Full text  (PDF)

References: 
  1. Kasatkin, L. V. and Chayka, V. E., 2006. Semiconductor devices in millimeter waves. Sebastopol: Weber Publ. (in Russian).
  2. Tager, А. S. and Vald-Perlov, V. M., 1968. Impact Avalanche and Transit Time Diodes and their Application in Microwave Engineering. Мoscow: Sov. Radio Publ. (in Russian).
  3. Tager, А. S., 1966. Impact Avalanche and Transit Time Diodes and their Application in Microwave Engineering. Usp. Fiz. Nauk, 90(4), pp. 631–666 (in Russian).
  4. Fedorov, N. D., 1979. Microwave and Quantum Electronics. Мoscow: Atomizdat Publ. Chapter 10, pp. 27, 135, 137, 141 (in Russian).
  5. Carrol, J. E., 1970. Hot Electron Microwave Generators. New York: Elsevier Publ.
  6. Prokhorov, E. D., 2008. Solid-State Electronics. Kharkiv: V. Karazin Kharkiv National University Publ. (in Russian).
  7. Yepifanov, G. I. and Moma, Yu. A., 1986. Introduction to Solid State Electronics. Moscow: Vysshaya shkola Publ. (in Russian).
  8. Lukin, K. A., Cerdeira, H. A., Colavita, A. A. and Maksymov, P. P., 2003. Internal Amplification of Current Pulses inside a Reverse Biased pn–i–pn-structure. Int. J. Model. Simul., 23(2), pp. 77–84.
  9. Lukin, K. A., Cerdeira, H. A. and Maksymov, P. P., 2003. Self-oscillations in reverse biased p–n-junction with current injection. Appl. Phys. Lett., 83(20), pp. 4643–4645.
  10. Maksymov, P. P., 2008. A solution algorithm for the drift-diffusion model equations of semiconducting structures with avalanche pn-junctions. In: V. M. Yakovenko, ed. 2008. Radiofizika i elektronika. Kharkov: IRE NAS of Ukraine Publ. 13(3), pp. 523–528 (in Russian).
  11. Lukin K. A. and Maksymov, P. P., 2012. Coherent power combining in avalanche-oscillator diodes. Radiofizika i elektronika, 3(17)(4), pp. 70-75 (in Russian).
  12. Scharfetter, S. and Gummel, H. K., 1969. Large-signal analysis of a silicon Read diode oscillator. IEEE Trans. Electron Devices, 16(1), pp. 64–77.
  13. Samarsky, A. A. and Popov, Yu. P., 1980. Finite-Difference Methods in Gas Dynamics. Moscow: Nauka Publ. (in Russian).
  14. Lukin. K. A., 2008. Millimeter wave band noise radar. In: V. M. Yakovenko, ed. 2008. Radiofizika i elektronika. Kharkov: IRE NAS of Ukraine Publ. 13(spec. iss.), pp. 344–358 (in Russian).
  15. Prokhorov, A. M. ed., 1990. Physical encyclopedia. Moscow: Sov. Ents. Publ. (in Russian).
  16. Basanets, V. V., Boltovets, N. S., Zorenko, A. V., Gutsul, A. V., Kolesnik, N. V., Gerashchenko, S. I., 2009. Powerful pulsed silicon avalanche-transit diodes at 8-mm range. Tekhnika i pribory SVCh, 1, pp. 27‑30 (in Russian).
  17. Belyaev, A. E., Basanets, V. V., Boltovets, N. S., Zorenko, A. V., Kapitanchuk, L. M., Klad'ko, V. P., Konakova, R. V., Kolesni, N. V., Korostinskaya, T. V., Kritskaya, T. V., Kudrik, Ya. Ya., Kuchuk, A. V., Milenin, V. V., Ataubaeva, A. B., 2011. Influence of overheating p-n-junctions to the degradation of high-power silicon IMPATT diodes. Fizika i tekhnika poluprovodnikov, 45(2), pp. 256–262 (in Russian).
  18. Kuznetsov, S. P., 2001. Dynamical Chaos. Moscow: Fizmatlit Publ. (in Russian).
  19. Rabinovich, М. I. and Trubetskov, D. I., 1984. Introduction to the Theory of Oscillations and Waves. Мoscow: Nauka Publ. (in Russian).