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VOLT-AMPERE CHARACTERISTIC AND INDUCED CURRENT IN THE EXTERNAL CIRCUIT OF AVALANCHE-GENERATOR DIODES ON THE BASIS OF THE BACK DISPLACED ABRUPT P–N-JUNCTIONS

heading: 
VACUUM AND SOLID STATE ELECTRONICS
Lukin, KA, Maksymov, PP
Organization: 

O. Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine
12, Proskura st., Kharkov, 61085, Ukraine
E-mail: lukin.konstantin@gmail.com
https://doi.org/10.15407/rej2015.04.045
Language: russian
Abstract: 

Creation of modern solid-state microwave power sources is based on the application of active elements with expanded functionality. The reverse-biased p–n-junctions with DC voltage are active elements of diodes generators. Avalanche-generator diodes (AGD) based on reverse-biased abrupt p–n-junctions with DC voltage are promising for creating diode generators. We investigated the static current-voltage characteristic of AGD by the methods of diffusion-drift theory. The induced current in the AGD external circuit was investigated. It was found that the spectrum of induced current is determined by the spectrum of auto oscillations of AGD. The results of the research are the theoretical basis for the creation of diode microwave generators with the requisite energy and spectral characteristics.
Keywords: ampere-voltage characteristic, avalanche-generator diodes, current instability, electronic efficiency, induced current, output power

Manuscript submitted  09.09.2015 г.
PACS     85.30.Mn; 85.30.−z; 85.30.Kk
Radiofiz. elektron. 2015, 20(4): 45-53
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