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DYNAMICS OF TWO-FREQUENCY AVALANCHE-GENERATOR DIODES OF MICROWAVE RANGE

heading: 
VACUUM AND SOLID STATE ELECTRONICS
Lukin, KA, Maksymov, PP
Organization: 

O. Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine
12, Proskura st., Kharkov, 61085, Ukraine
E-mail: lukin.konstantin@gmail.com
https://doi.org/10.15407/rej2015.04.054
Language: russian
Abstract: 

The actual task of semiconductor electronics is development and creation of diode generators of microwave power on the basis of active elements with the extended functional possibilities. It is shown that avalanche-generator diodes (AGD) on the basis of abrupt p–n-junctions with constant voltage of the reversed bias are the generators of microwave power. The theoretical analysis of mathematical model of AGD is based on the decision of the complete system of equalizations of diffusive-drifting model describing physical processes in a diode taking into account the influence of charge of mobile carriers on the electric field. A limiting cycle and invariant torus is certain in the phase plane of AGD. It is shown that at high voltage of the reversed bias on abrupt p–n-junctions in AGD there is an internal feed-back between the electric field and avalanche current, resulting in current instability and generation of two-frequency oscillations. The results of theoretical analysis of AGD can be of practical interest to developers of powerful dual-frequency sources of electromagnetic waves of microwave range.
Keywords: attractor, avalanche-generator diode, dual frequency self-exciting oscillation, limit cycle

Manuscript submitted  20.10.2015 г.
PACS     85.30.Mn; 85.30.−z; 85.30.Kk
Radiofiz. elektron. 2015, 20(4): 54-61
Full text  (PDF)

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