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ISSN 1028-821X (Print)

DOUBLE SPLITTING OF MULTIPLICATION LAYER IN AVALANCHE GENERATING DIODES AND GENERATION OF TWO-FREQUENCY SELF-OSCILLATIONS

heading: 
VACUUM AND SOLID STATE ELECTRONICS
Lukin, KA, Maksymov, PP
Organization: 

O. Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine
12, Proskura st., Kharkov, 61085, Ukraine
E-mail: lukin.konstantin@gmail.com
https://doi.org/10.15407/rej2016.02.059
Language: Russian
Abstract: 

Design of sources of powerful electromagnetic oscillations in microwave and THz frequency bands is a challenge for radio-electronic engineers. Design of avalanche-generating diodes that generate two phase locked oscillations in microwave and THz ranges is considered in the paper. Summation of two generating oscillations with either close or different frequencies allows managing power and spectral characteristics of the output signal. The physical processes occurring in the avalanche-generating diodes on the basis of abrupt Si and GaAs p–n-junctions at the constant reverse biased voltage are investigated. The effect of the double splitting of the multiplication layer has been revealed. In the suggested avalanche-generating diodes, regular and chaotic self-oscillations of electrons and holes components of the output power are excited in p- and n-regions of the p–n-junction, respectively.
Keywords: avalanche-generating diode, double splitting of multiplication layer, electronic efficiency, Power spectral density, TRAPATT-regime

Manuscript submitted 07.04.2016
PACS 85.30.-z
Radiofiz. elektron. 2016, 21(2): 59-65
Full text (PDF)

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